LTO-DMS

Semiconductors


Discrete Devices
Power Modules
- Fast Recover Epitaxial Diode Modules
- Half Bridge
-High Voltage Rectifier Modules
-Schottky Rectifier Diode Modules
-Single-Phase Glass Passivated Rectifier Bridge Modules
-Single-Phase Glass Passivated Rectifier Bridges

-Three-Phase Glass Passivated Rectifier Bridges

Integrated Circuits

Single-Phase Glass Passivated Bridge Rectifiers

Single-Phase Glass Passivated Bridge Rectifiers

 

Part

Number

Main Electrical Characteristics

Package

Data Sheet Down

VRRM

  [V]

IFAV @ TC

 

 [A]    [ºC]

IFSM

8.3ms

[A]

IR

25ºC

[¦ÌA]

VFM at IFM

 

[V]   [A]

GBJ6005

GBJ601

GBJ602

GBJ604

GBJ606

GBJ608

GBJ610

50

100

200

400

600

800

1000

6.0   110

150

5.0

1.0    3.0

  Fig.1

  Development

GBJ8005

GBJ801

GBJ802

GBJ804

GBJ806

GBJ808

GBJ8010

50

100

200

400

600

800

1000

8.0   100

170

5.0

1.0    4.0

  Fig.1

Development

GBJ10005

GBJ1001

GBJ1002

GBJ1004

GBJ1006

GBJ1008

GBJ1010

50

100

200

400

600

800

1000

10.0   100

170

5.0

1.05   5.0

  Fig.1

Development

GBJ15005

GBJ1501

GBJ1502

GBJ1504

GBJ1506

GBJ1508

GBJ1510

50

100

200

400

600

800

1000

15    100

200

10

1.05   7.5

  Fig.1

Development

GBJ20005

GBJ2001

GBJ2002

GBJ2004

GBJ2006

GBJ2008

GBJ2010

50

100

200

400

600

800

1000

20    100

240

10

1.05   10.0

  Fig.1

Development

GBJ25005

GBJ2501

GBJ2502

GBJ2504

GBJ2506

GBJ2508

GBJ2510

50

100

200

400

600

800

1000

25    110

240

10

1.1    12.5

  Fig.1

Development

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