LTO-DMS

Semiconductors

Discrete Devices
-MOSFETs
-IGBT
-Rectifier Diodes
-Ultrafast Diodes
--Ultrafast Diodes
--Enhanced Ultrafast Diodes
-Schottky Barrier Rectifier Diodes
-Thyristor Diodes
-Triacs
Power Modules
Integrated Circuits

Ultrafast Diodes
-Ultrafast Diodes (2) (3) (4)
-Enhanced Ultrafast Diodes (2) (3) (4)

Ultrafast Diodes [1]
Part Number

Main Electrical Characteristics

 Package Data Sheet Down

Voltage

@25¡ãC

 

[V]

Current

@25¡ãC

  

[A]

VF at  IF(av) @25¡ãC

 

[V]

PD  

¡¡

[W]

IR

@VR£§25¡ãC  

[mA]

trr

 typ.

 

 [ns]

RTH  

¡¡

(¡ãC/W)

LD100UF03
300
100
1.4
150
0.4
60
0.4
 TO-3P Development
LD20UF03
300
20
1.8
40
0.2
35
2.2
 TO-220AC Development
LD30UF03
300
30
1.5
50
0.2
40
1.4
 TO-220AC Development
LD30UF03D
300
30
1.5
50
0.2
40
1.4
 D2PAK (TO-263AB) Development
LD50UF03
300
50
1.45
80
2
45
0.93
 TO-247AC Development
LD75UF03
300
75
1.4
 110
0.4
50
0.6
 TO-247AC Development
 
LD20UF03BT
300
2x20
1.8
40
0.2
35
2.2
 TO-247AD Development
LD30UF03BT
300
2x30
1.5
50
0.2
40
1.4
 TO-247AD Development
LD50UF03PT
300
2x50
1.45
80
2
4
0.93
 TO-3P Development
LD100UF03ST
300
2x100
1.5
150
0.4
60
0.4
 SOT-227£¨TO-254AA£© Development
LD50UF03ST
300
2x50
1.45
80
2
45
0.93
 SOT-227£¨TO-254AA£© Development
LD75UF03ST
300
2x75
1.4
110
0.4
50
0.6
 SOT-227£¨TO-254AA£© Development 
 

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