©2003 LTO-DMS Semiconductors. All rights reserved.
　
LTO-DMS

Semiconductors
　

Discrete Devices
-MOSFETs
-IGBT
-Rectifier Diodes
-Ultrafast Diodes
-Schottky Barrier Rectifier Diodes
-Thyristor Diodes
-Triacs
Power Modules
Integrated Circuits
Rectifier Diodes
　

Recifier Diodes
Part Number
Main Electrical Characteristics
Package
Data Sheet Down
VR=VRRM

IFAV

TC=100℃
IFRMS

IFSM

45℃

VTO

10ms

Rthjc
［V］
［A］
［A］
［A］
[V]
K/W
RD8-08
800
8
18
250
0.85
2
TO-220 AC
Development
RD8-10
1000
18
250
0.85
2
TO-220 AC
Development
RD8-12
1200
18
250
0.85
2
TO-220 AC
Development
RD8-16
1600
18
250
0.85
2
TO-220 AC
Development
RD10-08
800
10
18
250
0.85
2
TO-220 AC
Development
RD10-10
1000
18
250
0.85
2
TO-220 AC
Development
RD10-12
1200
18
250
0.85
2
TO-220 AC
Development
RD10-16
1600
18
250
0.85
2
TO-220 AC
Development
RD10-18
1800
18
250
0.85
2
TO-220 AC
Development
RD15-08
800
15
24
300
0.8
1.4
TO-220 AC
Development
RD15-10
1000
24
300
0.8
1.4
TO-220 AC
Development
RD15-12
1200
24
300
0.8
1.4
TO-220 AC
Development
RD15-16
1600
24
300
0.8
1.4
TO-220 AC
Development
RD15-18
1800
24
300
0.8
1.4
TO-220 AC
Development
RD25-08
800
25
40
370
0.85
1.5
TO-220 AC
Development
RD25-10
1000
40
370
0.85
1.5
TO-220 AC
Development
RD25-12
1200
40
370
0.85
1.5
TO-220 AC
Development
RD25-16
1600
40
370
0.85
1.5
TO-220 AC
Development
RD25-18
1800
40
370
0.85
1.5
TO-220 AC
Development
RD30-08
800
30
-
300
0.85
1
TO-220 AC
Development
RD30-10
1000
-
300
0.85
1
TO-220 AC
Development
RD30-12
1200
-
300
0.85
1
TO-220 AC
Development
RD30-16
1600
-
300
0.85
1
TO-220 AC
Development
RD30-18
1800
-
300
0.85
1
TO-220 AC
Development
RD50-08
800
50
-
475
0.8
0.55
TO-220 AC
Development
RD50-10
1000
-
475
0.8
0.55
TO-220 AC
Development
RD50-12
1200
-
475
0.8
0.55
TO-220 AC
Development
RD50-16
1600
-
475
0.8
0.55
TO-220 AC
Development
RD50-18
1800
-
475
0.8
0.55
TO-220 AC
Development