LTO-DMS

Semiconductors


Discrete Devices
-Mosfets
-IGBT
-direct IGBT
-direct IGBT with diode
-Rectifier Diodes
-Ultrafast Diodes
-Schottky Barrier Rectifier Diodes
-Thyristor Diodes
-Triacs
Power Modules
Integrated Circuits
¡¡
IGBT
-direct IGBT

-direct IGBT with diode
¡¡
Discrete IGBT

Part number

Main Electrical Characteristics

Package

Data Sheet Down

BVces

[V]

Ic@25¡ãC

[A]

Ic@100¡ãC

[A]

Vce(on)

[V]

PD

[W]

Switching Speed: 75¡­150kHz

LGB30N60WS

600

23

12

2.10

100

D2PAK(TO-263AB)

Development

LGB20N60W

600

13

6.5

2.60

60

TO-220AB

Development

LGB30N60W

600

23

13

2.70

100

TO-220AB

Development

LGB40N60W

600

40

20

2.50

160

TO-220AB

Development

LGP30N60W

600

23

12

2.70

100

TO-247AD

Development

LGP40N60W

600

40

20

2.50

160

TO-247AD

Development

LGP50N60W

600

55

27

2.30

200

TO-247AD

Development

LGP50N90W

900

51

28

2.70

200

TO-247AD

Development

Switching Speed: 10¡­75kHz  

LGB30N60US

600

23

12

2.10

100

D2PAK(TO-263AB)

Development

LGB20N60U

600

13

6.5

2.10

60

TO-220AB

Development

LGB30N60U

600

23

12

2.10

100

TO-220AB

Development

LGB40N60U

600

40

20

2.10

160

TO-220AB

Development

LGP30N60U

600

23

12

2.10

100

TO-247AD

Development

LGP40N60U

600

40

20

2.10

160

TO-247AD

Development

LGP50N60U

600

55

27

2.00

200

TO-247AD

Development

LGP40N120U

1200

30

15

3.50

160

TO-247AD

Development

LGP50N120U

1200

45

24

3.70

200

TO-247AD